UTLU, G. Et Al. 2010. Structural and electrical characterization of the nickel silicide films formed at 850 degrees C by rapid thermal annealing of the Ni/Si(100) films. APPLIED SURFACE SCIENCE , vol.256, is.16 , 5069-5075.

UTLU, G., ARTUNC, N., Budak, S., & Tari, S., (2010). Structural and electrical characterization of the nickel silicide films formed at 850 degrees C by rapid thermal annealing of the Ni/Si(100) films. APPLIED SURFACE SCIENCE , vol.256, is.16, 5069-5075.

UTLU, GÖKHAN Et Al. "Structural and electrical characterization of the nickel silicide films formed at 850 degrees C by rapid thermal annealing of the Ni/Si(100) films," APPLIED SURFACE SCIENCE , vol.256, is.16, 5069-5075, 2010

UTLU, GÖKHAN Et Al. "Structural and electrical characterization of the nickel silicide films formed at 850 degrees C by rapid thermal annealing of the Ni/Si(100) films." APPLIED SURFACE SCIENCE , vol.256, is.16, pp.5069-5075, 2010

UTLU, G. Et Al. (2010) . "Structural and electrical characterization of the nickel silicide films formed at 850 degrees C by rapid thermal annealing of the Ni/Si(100) films." APPLIED SURFACE SCIENCE , vol.256, is.16, pp.5069-5075.

@article{article, author={GÖKHAN UTLU Et Al. }, title={Structural and electrical characterization of the nickel silicide films formed at 850 degrees C by rapid thermal annealing of the Ni/Si(100) films}, journal={APPLIED SURFACE SCIENCE}, year=2010, pages={5069-5075} }