Design an ultra low-noise S-band amplifier


Yeğin K.

Edn, cilt.2012, ss.1-3, 2012 (SCI Expanded İndekslerine Giren Dergi)

  • Cilt numarası: 2012 Konu: 6
  • Basım Tarihi: 2012
  • Dergi Adı: Edn
  • Sayfa Sayıları: ss.1-3

Özet

Engineers often perceive RF-low-noise-amplifier design as a difficult task. Obtaining a low-noise figure with high stable gain can be challenging—even intimidating. However, with the recent evolution of GaAs (gallium-arsenide) heterojunction FETs, you can design amplifiers with a less-than-1-dB noise figure and high stable gain. This Design Idea describes a low-noise amplifier with a 0.77-dB noise figure.