Room and low temperature cathodoluminescence (CL) of rare earth doped Bi4Ge3O12 (BGO) has been recorded. Luminescence signals noted in the wavelength range (300 - 800 nm) include intrinsic broad emission bands and signals related to Eu3+, Nd3+, and Tm3+. CL measurements made on Bi4Ge3O12 (BGO) doped with rare earth ions are reported for the temperature range 40 to 300 K with different CL excitation modulation frequencies. Dopant levels used in the present study are 1.1, 0.4, and 0.3 wt% Nd, 0.4 wt% Tm and 3 ppm Eu. All dopant levels exhibited different CL spectra with evidence for lines due to the rare-earth dopants intra-4f transitions. The temperature dependence of the intensity of the emission band is discussed.