The effects of grain boundary scattering on electrical resistivity of Ag/NiSi suicide films formed on silicon substrate at 500 degrees C by RTA


UTLU G. , ARTUNC N.

APPLIED SURFACE SCIENCE, cilt.310, ss.248-256, 2014 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 310
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1016/j.apsusc.2014.02.145
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Sayfa Sayıları: ss.248-256

Özet

The temperature-dependent resistivity measurements of Ag/Ni-Si silicide films with 28-260 nm thicknesses are studied as a function of temperature and film thickness over the temperature range of 100-900 K. The most striking behavior is that the variation of the resistivity of the films with temperature exhibits an unusual behavior. The total resistivity of the Ag/Ni-Si silicide films in this work increases linearly with temperature up to a T-m temperature, and thereafter decreases rapidly. Our analyses have shown that in the temperature range of 100 to T-m degrees K, the parallel-resistor formula reduces to Matthiessen's rule and theta(D) (Debye temperature) have been found to be about 201-404K for the films. The correlation of the Ag/Ni-Si silicide formation with its electrical and morphological properties is also established.