Effect of B or N doping on the dielectric and electrical properties of ZnO at room temperature


MATERIALS RESEARCH EXPRESS, cilt.6, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 6 Konu: 6
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1088/2053-1591/ab0b83


Boron (B) or nitrogen (N) doped ZnO nanoparticles were fabricated using mechanochemical technique. To research the effect of doping rate on the dielectric and electrical properties, B-n-ZnO and N-n-ZnO (n = 2 and 4 wt%) were obtained. The chemical compositions of the produced metal oxides were determined by Fourier transform infrared spectroscopy (FTIR). Several vibration modes caused by specific substituents were observed for all samples in FTIR spectra. The dielectric spectra were also analysed in the light of earlier results for an elaborative examination. Dielectric behaviours of the undoped and B or N doped ZnO nanostructures were studied by means of dielectric spectroscopy (DS) in the large frequency range 10(-2)-10(7) Hzat room temperature. As a result of the dielectric study of ZnO with B or N dopants, remarkable changes in dynamics such as dielectric constant, dielectric loss tangent, capacitance and electrical conductivity were obtained in tune with Koop's theory. The electrical conductivity response for the entire samples obeyed the Jonscher power law equation, and the hopping mechanism between ionized oxygen vacancies was found to dominate the conduction mechanisms in the undoped and doped ZnO nanoparticles. The maximum dielectric constant in this study (60 at 1 Hz) has been achieved with the N doped ZnO samples. It was also determined that N doping increased the undoped ZnO capacitance value from 5.14 x 10(-11) F to 2.64 x 10(-10) F, whereas B doping decreased it up to 1.56 x 10(-11) F.