The calculation of the reflection coefficients by analyzing resistivity data of the Ni-Si silicide films formed at 850 degrees C by RTA


UTLU G. , ARTUNC N.

MICROELECTRONIC ENGINEERING, vol.113, pp.86-92, 2014 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 113
  • Publication Date: 2014
  • Doi Number: 10.1016/j.mee.2013.07.019
  • Title of Journal : MICROELECTRONIC ENGINEERING
  • Page Numbers: pp.86-92

Abstract

The total electrical resistivity measurements of the Ni-Si silicide films, with thicknesses of 37-400 nm have been carried out as a function of temperature and film thickness in a wide temperature range of 100-900 K. The temperature-dependence of the total resistivity of the films shows unusual behavior. The total resistivity of the Ni-Si suicide films in this work increases linearly with temperature up to a T-m temperature, thereafter decreases rapidly and finally reaches zero.